B. Jayant Baliga, Date of Birth, Place of Birth

B. Jayant Baliga

American electrical engineer from India

Date of Birth: 28-Apr-1948

Place of Birth: Chennai, Tamil Nadu, India

Profession: scientist, electrical engineer

Nationality: United States, India

Zodiac Sign: Taurus

Bantval Jayant Baliga (born (1948-04-28)28 April 1948 in Chennai) is an Indian electrical engineer best known for his work in power semiconductor devices, and particularly the invention of the insulated gate bipolar transistor (IGBT).Dr.
B.
Jayant Baliga wrote: "Power semiconductor devices are recognized as a key component of all power electronic systems.
It is estimated that at least 50 percent of the electricity used in the world is controlled by power devices.
With the wide spread use of electronics in the consumer, industrial, medical, and transportation sectors, power devices have a major impact on the economy because they determine the cost and efficiency of systems.
After the initial replacement of vacuum tubes by solid state devices in the 1950s, semiconductor power devices have taken a dominant role with silicon serving as the base material.
These developments have been referred to as the Second Electronic Revolution".